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| 번호 | 제목 | 저자 | 저널명 | Vol/Issue/year | Link |
|---|---|---|---|---|---|
| 13991 | Infrared and Raman spectroscopy of mullite-type Bi2Ga4O9 | A. Beran, E. Libowitzky, M. Burianek, M. Mühlberg, C. Pecharromán and H. Schneider | Crystal Research and Technology | 043/11/2008 | 원문링크 |
| 13992 | Polymorphy of monoclinic terbium triborate, TbB3O6 | P. Becker and R. Fröhlich | Crystal Research and Technology | 043/11/2008 | 원문링크 |
| 13993 | Laser-induced crystal growth of nonlinear optical Ba3Ti3O6(BO3)2 on glass surface | T. Oikawa, T. Honma and T. Komatsu | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13994 | Kinetic studies on the influence of temperature and growth rate history on crystal growth | P. M. Martins and F. A. Rocha | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13995 | Mechanism of aggregation and intergrowth of crystals during bulk crystallization from solutions | O. D. Linnikov | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13996 | Liquid phase epitaxy set-up designed for in situ X-ray study of SiGe island growth on (001) Si substrates | Th. Teubner, U. Jendritzki, K. Böttcher, G. Schadow, R. Heimburger, A.-K. Gerlitzke, S. Deiter, Ch. Eisenschmidt, T. Boeck, R. Fornari and M. Hanke | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13997 | The struvite-type compounds M [Mg(H2O)6](X O4), where M = Rb, Tl and X = P, As | M. Weil | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13998 | Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization | P. Prabukanthan and R. Dhanasekaran | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 13999 | A solvothermal route to tellurium based thin films | Jianmin Ma, Xiaodi Liu, Liyan Wu and Wenjun Zheng | Crystal Research and Technology | 043/12/2008 | 원문링크 |
| 14000 | The effect of Si/Al ratio of ZSM-5 zeolite on its morphology, acidity and crystal size | L. Shirazi, E. Jamshidi and M. R. Ghasemi | Crystal Research and Technology | 043/12/2008 | 원문링크 |
